发明名称 TRANSFER MASK FOR ELECTRON BEAM
摘要 PROBLEM TO BE SOLVED: To provide a mask which can secure the accuracy of consecutiveness of patterns while suppressing the mask size to an irreducible min. SOLUTION: This transfer mask consists of a membrane 1 where the pattern to be transferred to a sensitive substrate is formed and supports 2 to divide the membrane into a plurality of rectangular regions. In the rectangular region, small regions 3 as a plurality of pattern regions are arranged in the longitudinal direction with a nonpattern region 4 arranged between the small regions. The nonpattern region has 1 to 50 μm width.
申请公布号 JP2000292911(A) 申请公布日期 2000.10.20
申请号 JP19990099542 申请日期 1999.04.07
申请人 NIKON CORP 发明人 KAWADA SHINTARO
分类号 H01L21/027;G03F1/20 主分类号 H01L21/027
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