发明名称 |
Dynamic random access memory circuit having a testing system and method to determine the sensitivity of a sense amplifier |
摘要 |
<p>A dynamic random access memory (DRAM) utilizes a testing system to independently control a voltage differential appearing between a pair of bit lines and sensed by the sense amplifier. The sensitivity of the sense amplifier is determined by monitoring an input/output signal in response to sensing the known voltage differential. The magnitude of the voltage differential appearing between the bit lines is controlled by enabling a first dummy cell to transfer a first reference charge onto a first bit line and by enabling a second dummy cell to transfer a second reference charge onto a second bit line.</p> |
申请公布号 |
EP1045397(A2) |
申请公布日期 |
2000.10.18 |
申请号 |
EP20000302532 |
申请日期 |
2000.03.28 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
BRADY, JAMES |
分类号 |
G11C11/401;G01R31/28;G11C29/02;G11C29/12;G11C29/50;(IPC1-7):G11C29/00;G01R31/00;G11C7/24;G11C7/14 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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