| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve a program efficiency, by highly integrating a chip, and by increasing a coupling ratio. CONSTITUTION: A semiconductor memory device comprises a trench, a first isolation insulating layer, first and second impurity regions, a first gate insulating layer, a floating gate(38), a second gate insulating layer, a control gate(42), a second isolation insulating layer, a cap insulating layer(43) and a sidewall spacer. The trench has a constant width in a constant direction on a semiconductor substrate. The first isolation insulating layer isolates a cell in a length direction in a predetermined central region of the trench. The first and second impurity regions are buried in a side of the trench on both sides of the first isolation insulating layer and within a protruded semiconductor substrate between the trenches in one direction. The first gate insulating layer is formed on the entire surface. The floating gate is formed across a side of the first isolation insulating layer and protruded semiconductor substrate. The second gate insulating layer is formed on the entire surface including the floating gate. The control gate intersects the first and second impurity regions at right angle, surrounding the floating gate in the width direction of the cell. The second isolation insulating layer isolates the cell in the width direction. The cap insulating layer is formed on the control gate. The sidewall spacer is formed on both side surfaces of the control gate and cap insulating layer.
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