METHOD OF MANUFACTURING SILICON GERMANIUM BIPOLAR TRANSISTOR

摘要

PURPOSE: A method of manufacturing silicon germanium bipolar transistor is provided to minimize the loss of the transmission signal at the transmission line and the coupling effect, to improve the uniformity of the base resistance in the wafer, and also to reduce the base resistance. CONSTITUTION: On the semiconductor substrate on which the first conductivity type high density impurities are doped, the first semiconductor thin film where the first conductivity type low-density impurities are doped, the second semiconductor thin film(19) where the first conductivity type low-density impurities are doped, and the first insulation layer(20) are successively deposited. The first and the second semiconductor thin film are selectively etched to form at least two adjacent island-shaped patterns. The second insulation layer(21) is formed on each side wall of the two patterns, and a part of the first semiconductor thin film is selectively oxidized to thereby form a heat-oxidation layer(24). The first conductive layer pattern(25) is formed on the first area. The second conductive layer pattern(26) is formed to cover the second area and the second conductive layer pattern. The third insulation layer(27) and the third planarized conductive layer(28) are successively formed thereon and a supporting substrate is adhered to the third conductive layer(28). A silicongermanium thin film pattern(30) is formed to cover the second semiconductor thin film exposed and the first conductive pattern exposed. The fourth open insulation layers(31,32) are formed. The fourth conductive layer pattern(34) is formed to contact to the silicon germanium thin film exposed. The fifth insulation layer is formed(35). A base electrode(37), an emitter electrode(36) and a collector electrode(38) are formed.