METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to form an interlayer insulation film preventing swelling. CONSTITUTION: An interlayer insulation film(15), that is, a BPSG film, to insulate a top interconnection layer and a bottom interconnection layer is flown on a semiconductor substrate(10). And, an etch back process is performed using N2O plasma processing or Ar plasma processing as to the whole surface after flowing the BPSG film. In order to form a contact hole to connect the top interconnection layer with the bottom interconnection layer on the BPSG film(15') whose surface is treated, a photo resist is coated and the first mask pattern(20) is formed by exposing and developing the photo resist. And, the BPSG film is dry-etched during an MRE process to improve a profile of the contact hole, and then the BPSG film is wet-etched in an SBOE(Surface Buffered Oxide Etchant) solution. And, after completing the MRE process through the third dry etching process after the wet etching, the contact hole(CH) is obtained.