METHOD FOR INSPECTING ACTIVE MATRIX SUBSTRATE AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for inspecting an active matrix substrate for easily and accurately inspecting whether or not the dimension in the channel length direction of a low density drain region is normal in an active matrix substrate in which a TFT equipped with an LDD structure is formed, and a method for manufacturing a semiconductor device using this method. SOLUTION: A substrate for inspection is transfered in the manufacturing process of an active matrix substrate, and first and second TFTs 10A and 10B are formed symmetrical, and the light emitting state of each low density drain region 17A and 17B when these TFTs are turned on is observed by an emission microscope. As a result, when the dimensions of the channel length directions of the lightly-doped drain regions 17A and 17B are the same, since the frequency of generation of hot electrons in each lightly-doped drain regions 17A and 17B is made equivalent, light emission intensity is made equivalent, whereas when the dimensions of the channel length directions of the lightly- doped drain regions 17A and 17B fluctuate due to mask deviation or the like, the light emission intensities differs.