Ferroelektrische Kondensatorstruktur in Serie für monolitisch integrierte Schaltungen und Herstellungsverfahren

摘要

A ferroelectric capacitor for a memory device including a substrate (10), a bottom electrode (20) and a top electrode (40). Between the bottom and the top electrodes is either an alternating plurality of layers (30a, 30b) of ferroelectric material and intermediate electrodes or a plurality of layers (30a, 30b, 30c) of ferroelectric material. A method for forming the same through establishing one layer over the other is also disclosed.