发明名称 |
Plasma enhanced chemical vapor deposited (PECVD) silicon nitride barrier layer for high density plasma chemical vapor deposited (HDP-CVD) dielectric layer |
摘要 |
A method for forming a dielectric layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a polysilicon resistor. There is then formed over the polysilicon resistor a first dielectric layer formed of a silicon nitride dielectric material deposited employing a plasma enhanced chemical vapor deposition (PECVD) method other than a high density plasma chemical vapor deposition (HDP-CVD) method. Finally, there is then formed over the first dielectric layer a second dielectric layer deposited employing a high density plasma chemical vapor deposition (HDP-CVD) method, where first dielectric layer attenuates a decrease in resistance of the polysilicon resistor incident to forming the second dielectric layer over the first dielectric layer.
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申请公布号 |
US6127238(A) |
申请公布日期 |
2000.10.03 |
申请号 |
US19990266373 |
申请日期 |
1999.03.11 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LIAO, MARVIN DE-DUI;CHOK, KHO LIEP;ZHENG, JIA ZHEN;LU, WEI;LIN, YIH-SHUNG |
分类号 |
H01L21/314;H01L21/318;H01L21/768;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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地址 |
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