Method of manufacturing a semiconductor device having nitrogen-bearing oxide gate insulating layer

摘要

A semiconductor device having a nitrogen-bearing oxide gate insulating layer and methods of manufacture thereof are disclosed. A semiconductor device is formed by selecting a nitrogen-bearing species capable of providing a desired depth-distribution of nitrogen when an oxide layer is formed using the nitrogen-bearing species. The oxide layer is formed over a substrate, the oxide layer having the desired depth-distribution of nitrogen. A part of the oxide layer is selectively removed, giving the oxide layer a resultant depth-distribution of nitrogen. In accordance with another aspect of the process, a semiconductor device is formed by forming, in a reaction chamber, an oxide layer including nitrogen-bearing species on a substrate. A part of the oxide layer is selectively removed in the same reaction chamber.