| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to prevent a charge-up phenomenon by performing a process using plasma. CONSTITUTION: A diffused layer(12,13,14) is formed on a semiconductor substrate(1). The first insulating layer(15) is formed on an upper face of the semiconductor substrate(1). A contact hole(12a,13a,14a) is formed by exposing a predetermined region of the diffused layer(12,13,14). A metal layer is formed on an upper face of the first insulating layer(15) and within a contact hole(12a,13a,14a). A metal wire(12b,13b,14b) is formed by patterning the metal layer. The second insulating layer(16) is formed on the metal wire(12b,13b,14b) and the first insulating layer(15). An optic metal layer(22a) is formed on the second insulating layer(16). A permeation portion(21) and a hole for pad are formed by etching the optic metal layer(22a).
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