发明名称 |
METHOD FOR FILLING GAPS ON A SEMICONDUCTOR WAFER |
摘要 |
A method for filling gaps (1) on a semiconductor wafer (2) with a dielectric material (3, 8) employs a plasma enhanced chemical vapor deposition (PECVD) process with a temperature in the range of 500 to 700 DEG C. As a result of deposition gaps for e.g. shallow trench isolation or premetal dielectric techniques are filled homogeneously without any voids. The deposition may be improved with the application of a second radio frequency signal.
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申请公布号 |
WO0055901(A1) |
申请公布日期 |
2000.09.21 |
申请号 |
WO2000EP01763 |
申请日期 |
2000.03.01 |
申请人 |
SEMICONDUCTOR 300 GMBH & CO. KG;KIRCHHOFF, MARKUS |
发明人 |
KIRCHHOFF, MARKUS |
分类号 |
H01L21/76;H01L21/316;H01L21/318;H01L21/762;H01L21/768;H01L23/522;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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