| 摘要 |
PROBLEM TO BE SOLVED: To obtain a Schottky barrier diode with a high breakdown voltage and a large current where a leakage current in an opposite direction is reduced by forming a second conductivity type first surface layer with large depth and mutual interval and a second conductivity type second surface layer with small depth and mutual interval on the main surface of a first conductivity type SiC semiconductor substrate for forming Schottky junction. SOLUTION: A Schottky barrier diode is made of an SiC semiconductor substrate consisting of a first conductivity type first semiconductor layer 3 with a low-impurity concentration and a first conductivity type second semiconductor layer 2 with a high impurity concentration, a second conductivity type first surface layer 4 that is formed on the main surface of the said first semiconductor layer and has relatively large depth and mutual interval, a second conductivity type second surface layer 4 that is formed between the said first surface layers and has relatively small depth and mutual interval, a Schottky metal 5 that is joined to the main surface of the said first semiconductor layer and is subjected to ohmic contact with the said first surface layer and the second surface layer with low resistance, and a cathode electrode 6 that is subjected to ohmic contact with the said second semiconductor layer with low resistance. |
