| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is stabilized in emission selectivity and restrained from deteriorating in luminance performance or being lessened in emission variation, due to the fact that an electrically conductive layer is formed on an interface between a silicon substrate and a silicon nitride film, and a manufacturing method thereof. SOLUTION: Certain conductivity island-like semiconductor layers 2 are provided in a few rows on a silicon substrate 1, an opposite conductivity semiconductor layer 3 is formed on the semiconductor layers 2 with the one ends of the layers 2 partially exposed, electrodes 4 and 5 are each provided and connected to the exposed parts of the layers 2 and the layer 3 for the formation of a semiconductor light emitting device. An oxide layer 7 is formed on the exposed part of the silicon substrate 1, and a silicon nitride film 6 is formed on the oxide layer 7 and the semiconductor layers 2 and 3. |
