| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method wherein a side wall spacer shoulder part formed around a gate during a manufacturing process of a semiconductor device having an LDD structure is so removed as the upper part of gate is exposed with high dimension control precision. SOLUTION: A first process wherein a silicon nitride film 1 formed with a gate covered using a first atmosphere which contains chlorine, hydrogen bromide, sulfur hexafluoride, and oxygen by a voluminal ratio about 12:3:1:1 with a pressure less than 156 mTorr is anisotropic-etched to provide a side wall spacer, a second process wherein the shoulder part of a side wall spacer 1B is taper-etched for removal using a second atmosphere containing chlorine, sulfur hexafluoride, an oxygen by a voluminal ratio about 12:3:1 with a pressure less than 150 mTorr, and a third process wherein a side wall spacer 1C is isotropic-etched for shaping using a third atmosphere containing sulfur hexafluoride, hydrogen bromide, and oxygen by a voluminal ratio about 8:1:1 with a pressure 150 mTorr or more, are provided.
|
