| 摘要 |
A contact hole reaching a surface of a silicon substrate and a contact hole penetrating a resistor are formed on an interlayer insulation film by simultaneous etching. Then, a laminated film having a lower Ti layer and an upper TiN layer is formed as a substrate layer (barrier layer) of a wiring on the interlayer insulation film to bury the contact hole. Then, an annealing treatment is carried out at a temperature of 620 DEG C. Consequently, the laminated film buried in the contact hole penetrating the resistor and the resistor are caused to electrically come in contact with each other on a side face of the wiring (side contact).
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