| 发明名称 |
High voltage split gate CMOS transistors built in standard 2-poly core CMOS |
| 摘要 |
A split-gate MOS transistor includes two separate but partially overlapping gates to reduce the electric field near the drain-channel interface region and, thereby, has an increased gated-diode breakdown voltage.
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| 申请公布号 |
US6118157(A) |
申请公布日期 |
2000.09.12 |
| 申请号 |
US19980044220 |
申请日期 |
1998.03.18 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BERGEMONT, ALBERT |
| 分类号 |
H01L29/423;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/423 |
| 代理机构 |
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代理人 |
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| 主权项 |
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