| 摘要 |
PROBLEM TO BE SOLVED: To reduce the capacity between wirings on a substrate, to contrive the speedup of a semiconductor device and to make it possible to eliminate a breaking-off or the like of the wirings to the utmost by a method wherein a cavity with the inner wall covered with insulating films is formed between the wirings and a part of the inner wall of the cavity is formed of a metal silicide layer. SOLUTION: A silicon oxide film 12 is formed on a silicon substrate 11 and thereafter, an amorphous silicon film 13 and a silicon oxide film 14 are formed on the film 12. After three holes are bored in the film 14, a WSi2 layer 15 and a Ti layer 16 are formed on the film 14 and are patterned. This substrate 11 is annealed for five minutes at 700 deg.C in a nitrogen atmosphere, silicon in the film 13 is sucked out in the layer 16 via the layer 15 and the layer 16 is converted into a TiSix film 18. As this result, a cavity 17 is formed in the part formed with the film 13. Thereby, the capacity between wirings on the substrate 11 can be reduced and the high-speed operation, which sharply reduces the delay of a signal, of a semiconductor device can be realized.
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