| 摘要 |
PROBLEM TO BE SOLVED: To achieve a semiconductor device using a highly reliable TFT structure. SOLUTION: An insulating film used for a TFT such as, for example, a gate insulating film, protection film, undercoating film, interlayer insulating film or the like, is formed by sputtering a silicon nitride film containing 0.1-50 atoms % or 1-50 atoms %, preferably 0.1-10 atoms % of boron. Consequently, since this film has high heat conductivity, deterioration due to heat generated when a TFT is turned on can be prevented. |
