SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To improve a reliability of a gate insulating film made of metallic oxide to improve element characteristics and reliability. SOLUTION: The method for manufacturing a semiconductor device using a metallic oxide film for a gate insulating film or the like includes steps of forming a TiN film 11 on a silicon substrate 10 by a CVD process and subjecting the resultant laminate to a heat treatment to oxidize the film 11 in an O2 atmosphere into a TiO2 film 12, forming a TiN film 13 as a barrier metal on the TiO2 film 12, and then forming a gate electrode 14 on the TiN film 13.