| 摘要 |
PROBLEM TO BE SOLVED: To improve the operation characteristics of a transistor by providing a quantum wave interference layer of a multiple well structure which transmits carriers readily. SOLUTION: On a P-layer of nPn junction, a quantum wave interference layer, which is formed by laminating in multiple period a first layer and a second layer, whose band width is wider than that of the first layer, is formed by setting at even multiples of 1/4 of the quantum wavelength in each layer of the implanted electrodes. This quantum wave interference layer works as a transmitting layer which highly transmits electrons, and the operating resistance of the nPn junction can be made drastically small. The operation characteristics of an nPn type MESFET, having an electron transmitting layer 18, is improved when compared with the MESFET which has no electron transmitting layer 18. From similar theory, a hole transmitting layer is provided. A transistor, having improved operation characteristics, can be manufactured. This transistor can also be used for a bipolar transistor or an MOSFET. |
