| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve an effective current amplification factorβeff of an IIL, without increasing the number of steps in manufacturing an ordinary bipolar NPN transistor and which can simultaneously build a high breakdown voltage NPN transistor and the IIL therein, and also to provide a method for manufacturing the semiconductor device. SOLUTION: An N+-type diffused layer 13 is provided on an epitaxial layer between a P+-type diffused layer 8 and P+-type base layer of an IIL(integrated injection logic) so as to improve an effective current amplification factorβeff of the IIL. Furthermore, the diffused layer 13 is simultaneously made of the same diffused layer as those of the emitter of a high breakdown voltage NPN transistor and as the collector of the IIL.
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