METHOD FOR GROWING AN ALPHA-SIC BULK SINGLE CRYSTAL

摘要

The invention relates to a method for growing an alpha-SiC volume single crystal. The volume single crystal is produced from a SiC gaseous phase by depositing SiC on a SiC nucleus crystal (1). The aim of the invention is to reproducibly grow a SiC volume single crystal of the type 15R without restricting the nucleus crystal. To this end, the deposit is carried out und er a uniaxial tensile stress which encloses a given angle (5) together with the [0001]axis (2) of the volume single crystal in such a way that a rhombohedronic crystal is produced.