发明名称 |
Methods for providing void-free layers for semiconductor assemblies |
摘要 |
A method for the removal of voids and gas bubbles within uncured or partially cured microelectronic component enapsulants and adhesive/chip attach layers. A sealed void or gas bubble within a gap between a microelectronic component and a supporting substrate is substantially eliminated through the application of a uniform pressure (isostatic or hydrostatic) and energy such that a substantially void/bubble free interposer is created.
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申请公布号 |
US6107123(A) |
申请公布日期 |
2000.08.22 |
申请号 |
US19980188599 |
申请日期 |
1998.11.09 |
申请人 |
TESSERA, INC. |
发明人 |
DISTEFANO, THOMAS H.;FJELSTAD, JOSEPH |
分类号 |
H01L21/56;H01L21/68;H01L23/31;H01L23/495;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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