发明名称 Methods for providing void-free layers for semiconductor assemblies
摘要 A method for the removal of voids and gas bubbles within uncured or partially cured microelectronic component enapsulants and adhesive/chip attach layers. A sealed void or gas bubble within a gap between a microelectronic component and a supporting substrate is substantially eliminated through the application of a uniform pressure (isostatic or hydrostatic) and energy such that a substantially void/bubble free interposer is created.
申请公布号 US6107123(A) 申请公布日期 2000.08.22
申请号 US19980188599 申请日期 1998.11.09
申请人 TESSERA, INC. 发明人 DISTEFANO, THOMAS H.;FJELSTAD, JOSEPH
分类号 H01L21/56;H01L21/68;H01L23/31;H01L23/495;(IPC1-7):H01L21/44 主分类号 H01L21/56
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