SEMICONDUCTOR MEMORY CIRCUIT

摘要

PURPOSE: A defective cell recovering circuit of a semiconductor memory is provided to turn one only a switch which is controlled by a unit bit at which a transition occurs to reduce power dissipation by preventing body effect. CONSTITUTION: The defective cell recovering circuit of the semiconductor memory includes an address comparator circuit(10), a defective cell recovery enable circuit(20) and a matching signal generating circuit. The address comparator circuit outputs an internal matching signal of binary logic 0 when the addresses of the defective memory cell and updated memory cell are equal and outputs the internal matching signal of binary logic 1 when the addresses of the defective memory cell and updated memory cell are not equal. The defective cell recovery enable circuit de-activates the defective cell recovery enable signal when the address transition detect signal is of logic 1 and activates the defective cell recovery enable signal when the address transition detect signal is of logic 0. The matching signal generating circuit is turned on when the defective cell recovery enable signal is activated to output the internal matching signal and outputs the external matching signal(MATCH) of logic 1 when the defective cell recovery cell is of logic 1 and the internal matching signal is of logic 0.