Semiconductor storage device

摘要

A semiconductor device that enables a reduction in power consumption and a stable operation, and which can be manufactured easily and with a high level of integration. In an invention exemplifying the present application, a sense circuit constituting a DRAM comprises a bit line pre-charge circuit, a pre-amplifier circuit PSA100 and a main amplifier circuit MSA100. The pre-amplifier circuit is provide with a switch circuit and an amplifier circuit. The switch circuit comprises a switch element provided between input/output terminals and a pre-sense node, and a switch element provided between input/output terminals and another pre-sense node. The amplifier circuit comprises MOS transistors and switch elements.