MOCVD processes using precursors based on organometalloid ligands
摘要
Chemical vapor deposition processes utilize as precursors volatile metal complexes with ligands containing metalloid elements silicon, germanium, tin or lead.
申请公布号
US6099903(A)
申请公布日期
2000.08.08
申请号
US19990314762
申请日期
1999.05.19
申请人
RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK
发明人
KALOYEROS, ALAIN E.;WELCH, JOHN T.;TOSCANO, PAUL J.;CLAESSEN, ROLF;KORNILOV, ANDREI;BANGER, KULBINDER KUMAR
