发明名称 |
Electron flood apparatus for neutralizing charge build-up on a substrate during ion implantation |
摘要 |
An Electron flood apparatus for neutralizing positive charge build-up on substrate during implantation of ions in a substrate by ion beam implantation apparatus. The electron flood apparatus comprises a tube for axially receiving and passing an ion beam to a substrate, an opening in a sidewall of the tube, a plasma chamber having an exit aperture in communication with said opening of said tube, a supply of inert gas to said plasma chamber, a high frequency power generator, and means to deliver high frequency power from said generator to maintain a plasma in said chamber to produce low energy electrons, whereby a flux of said low energy electrons emerges from said chamber through said exit aperture into said tube to merge with the ion beam.
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申请公布号 |
US6100536(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19980081596 |
申请日期 |
1998.05.20 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ITO, HIROYUKI;QIAN, XUE-YU;MITCHELL, ROBERT J.;MOFFATT, STEPHEN |
分类号 |
H01J37/20;H01J37/02;H01J37/077;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 |
主分类号 |
H01J37/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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