发明名称 Electron flood apparatus for neutralizing charge build-up on a substrate during ion implantation
摘要 An Electron flood apparatus for neutralizing positive charge build-up on substrate during implantation of ions in a substrate by ion beam implantation apparatus. The electron flood apparatus comprises a tube for axially receiving and passing an ion beam to a substrate, an opening in a sidewall of the tube, a plasma chamber having an exit aperture in communication with said opening of said tube, a supply of inert gas to said plasma chamber, a high frequency power generator, and means to deliver high frequency power from said generator to maintain a plasma in said chamber to produce low energy electrons, whereby a flux of said low energy electrons emerges from said chamber through said exit aperture into said tube to merge with the ion beam.
申请公布号 US6100536(A) 申请公布日期 2000.08.08
申请号 US19980081596 申请日期 1998.05.20
申请人 APPLIED MATERIALS, INC. 发明人 ITO, HIROYUKI;QIAN, XUE-YU;MITCHELL, ROBERT J.;MOFFATT, STEPHEN
分类号 H01J37/20;H01J37/02;H01J37/077;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 H01J37/20
代理机构 代理人
主权项
地址