发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method with which the control performance of resistance value can be enhanced. SOLUTION: This semiconductor device is provided with at least, two conductive layers R1 and R2, which are adjacent to each other and an insulating film 2 covering the conductive layers R1 and R2. The insulating film 2 is provided with openings Op1 and Op2 partly exposing the respective conductive layers R1 and R2. A shortest distance D2 between the closest parts of the conductive layers R1 and R2 is set larger than a shortest distance D1 between the conductive layers. Therefore, even if a part of the conductive layer R1 is cut out, the possibility of adhesion of its scattering matter Q, etc., to the adjacent conductive layer R2 can be reduced.
申请公布号 JP2000216341(A) 申请公布日期 2000.08.04
申请号 JP19990012056 申请日期 1999.01.20
申请人 TOYOTA MOTOR CORP 发明人 TOGAWA TOSHIHIRO
分类号 H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L27/04;(IPC1-7):H01L27/04;H01L21/320 主分类号 H01L21/3205
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