Semiconductor device having an improved interconnection and method for fabricating the same

摘要

P+-type source/drain regions for load transistors and N+-type source/drain regions for driver transistors are connected by means of P+-type source/drain region outgoing lead and N+-type source/drain region outgoing lead via direct contact holes. The drain region outgoing lead for the load transistors and ground lead are formed in a three-dimensionally overlapping manner, and the drain region outgoing lead for the driver transistors connected to memory nodes on one side and the drain region outgoing lead for the load transistors connected to memory nodes on the other side are also formed in a three-dimensionally overlapping manner, whereby memory node charge accumulators are constituted.