| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a process for producing an active matrix substrate containing high-performance drivers by uniformly depositing a single crystal silicon layer of high electron/hole mobility at relatively low temperature and an electro-optic device, such as a thin-film semiconductor device, for display by using the same. SOLUTION: Gate parts consisting of gate electrodes and gate insulating films are formed on one surface of a first substrate 1 and further, differences 4 in level are formed on one surface of the first substrate 1. A semiconductor film and a low melting metallic layer 6 are formed or the low melting metallic layer 6 containing a semiconductor is formed on such first substrate 1. This substrate is heated to dissolve the semiconductor in the low melting metallic layer 6 and is then subjected to a cooling treatment, by which the single crystal semiconductor layer 7 is graphoepitixially grown with the differences 4 in level as seeds. Channel regions, source regions and drain regions are formed in the single crystal semiconductor layer 7, by which first thin-film transistors(TFTs) of a bottom gate type having the gate parts in the lower parts of the channel regions and constituting part of the peripheral drive circuit parts are formed.</p> |
