发明名称 LIGHT RECEIVING ELEMENT AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To make it possible to form a light receiving element using a glass substrate with a low melting point, especially a large glass substrate with a low melting point, by forming a silicon layer at low temperatures. SOLUTION: A light receiving element includes a glass substrate 11, a silicon layer made of a first conductive type formed in crystal growth of silicon on the glass substrate 11, an impurity layer of a second conductive type, as an upper layer of the silicon layer 12, with polarity contrary to the first conductive type, and an electrode layer 14 of first conductive type with density higher than the silicon layer 12. The electrode layer 14 is formed in the first conductive type part of the silicon layer 12.
申请公布号 JP2000208427(A) 申请公布日期 2000.07.28
申请号 JP19990004219 申请日期 1999.01.11
申请人 SONY CORP 发明人 YAMOTO HISAYOSHI;YAMANAKA HIDEO;YAGI HAJIME;SATO YUICHI
分类号 H01L21/22;H01L21/208;H01L31/02;(IPC1-7):H01L21/22 主分类号 H01L21/22
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