METHOD FOR FORMING COPPER INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a copper interconnection of a semiconductor device is to allow a copper layer formed on copper seed layer to be grown in a preferential aligned direction (111), thereby enhancing the reliability of the copper interconnection. CONSTITUTION: A method for forming a copper interconnection of a semiconductor device comprises the steps of: providing a semiconductor substrate in which a via hole(4) and a trench(5) are formed in an interlayer insulating layer(3); forming a barrier metal layer(6) on the surface of the semiconductor substrate; forming a copper seed layer(7) on the barrier metal layer and rapid thermal annealing the copper seed layer; forming a copper layer(8) on the copper seed layer in an electrolyte plating manner such that the via hole and the trenched is filled; chemical and mechanical polishing the resultant substrate to remove a part of the copper layer, the copper seed layer and the barrier metal layer on the interlayer insulating layer; and forming a capping layer(9) on the remaining copper layer on the trench.