发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A flash memory is provided to read initial data in the future even if the initial data such as a booting program is erased by mistakes. CONSTITUTION: To read a booting program in a flash memory, a booting data reading level(BR) is set and a CPU(central processing unit) downloads a control program by reading the booting program. A booting program memory area of flash memory is filled with writing in needing of changing the program. An erase pulse is fed to the area and the area is erased down to certain verify level. After that, the control program to be changed or failed to download is downloaded again by operating the booting program. In not needing of changing the control program, the flash memory performs normal reading.
申请公布号 KR20000047411(A) 申请公布日期 2000.07.25
申请号 KR19990020638 申请日期 1999.06.04
申请人 FUJITSU LIMITIED 发明人 HUKUO KAIKUTO
分类号 G11C16/02;G06F9/445;G11C7/20;G11C16/00;G11C16/04;G11C16/20;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/00 主分类号 G11C16/02
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