DRAM capacitor and method of making the same

摘要

An integrated circuit capacitor includes a first dielectric layer adjacent a substrate and having a trench therein, and a metal plug comprising an upper portion extending upwardly into the trench, and a lower portion disposed in the first dielectric layer. The lower portion has a tapered width which increases in a direction toward the substrate to thereby secure the metal plug in the dielectric layer. Preferably, the upper portion is also tapered. Furthermore, a second dielectric layer is adjacent the metal plug with an upper electrode thereon. <IMAGE>