发明名称 |
METHOD FOR FABRICATING IMAGE SENSOR |
摘要 |
PURPOSE: A method for fabricating an image sensor is provided to improve light sensitivity against short wavelength light by utilizing a protection film whose reflexibility against light is less. CONSTITUTION: In a method for fabricating an image sensor, an oxide film(31) as a first protection film is formed on a wafer, on which a metal wire(5) is formed, by use of a high density plasma chemical vapor deposition(HDP CVD) method. A spin on glass film(32) as a second protection film is formed on the oxide film(31). A surface(32a) of the spin on glass film(32) is process by an electronic beam.
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申请公布号 |
KR20000044578(A) |
申请公布日期 |
2000.07.15 |
申请号 |
KR19980061077 |
申请日期 |
1998.12.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
KIM, GWANG JIN;KIM, JUNG HEON |
分类号 |
H01L27/14;(IPC1-7):H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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地址 |
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