发明名称 METHOD FOR FABRICATING IMAGE SENSOR
摘要 PURPOSE: A method for fabricating an image sensor is provided to improve light sensitivity against short wavelength light by utilizing a protection film whose reflexibility against light is less. CONSTITUTION: In a method for fabricating an image sensor, an oxide film(31) as a first protection film is formed on a wafer, on which a metal wire(5) is formed, by use of a high density plasma chemical vapor deposition(HDP CVD) method. A spin on glass film(32) as a second protection film is formed on the oxide film(31). A surface(32a) of the spin on glass film(32) is process by an electronic beam.
申请公布号 KR20000044578(A) 申请公布日期 2000.07.15
申请号 KR19980061077 申请日期 1998.12.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 KIM, GWANG JIN;KIM, JUNG HEON
分类号 H01L27/14;(IPC1-7):H01L27/14 主分类号 H01L27/14
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