METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to ensure the operation of the semiconductor device by effectively removing an oxide layer remained in the form of a spacer. CONSTITUTION: A first oxide layer is formed on a semiconductor substrate(10) and a first metal circuit(14) is formed on the first oxide layer. A second oxide layer, a nitride film and a third oxide layer are sequentially formed on the structure. Then, a contact hole(24) is formed to expose the first metal circuit(14). A photo-sensitive pattern(22) is formed on the third oxide layer such that the photo-sensitive pattern(22) fills the contact hole(24). A hole(28) for exposing an etching barrier layer(18) is formed by etching the third oxide layer. The oxide layer remaining in a side wall of the photo-sensitive pattern(22) is removed by over-etching process using a fluorine gas and an oxygen gas. A second metal circuit is formed to fill the hole(28).