| 摘要 |
PURPOSE: A method for fabricating a CMOS image sensor is provided to improve a light transmittance by adjusting a thickness of a color filter pattern constantly. CONSTITUTION: In a method for fabricating a CMOS image sensor, a field oxide film(202) is formed on a silicon substrate(201), and a photo diode(203) is formed on the substrate(201). After forming an interlayer insulation film(204) on an entire surface of a resultant structure, a metal wire(205) is formed on the interlayer insulation film(204). An oxide film(206) as a first protection film is formed, and a spin on glass film(207) is formed on the oxide film(206). The spin on glass film(207) is etched back until a surface of the oxide film(206) is exposed. On an entire surface of a resultant structure is formed an oxide nitride film(208) as a second protection film whose thickness is able to be adjusted by controlling the oxygen and nitrogen containing amount. A color filter patterns(209) are formed on the oxide nitride film(208), and a flattened photo-resist film(210) is formed on an entire surface of a resultant structure. |
