METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve a reliability of a device by removing the remaining polycrystal silicon. CONSTITUTION: A method for manufacturing a semiconductor device comprises the following steps. A cell region and a peripheral region are defined on a substrate(31). An insulating layer is applied on the substrate. A multitude of word line(33) formed with a gap insulating layer is formed. A first insulating layer side wall(34a) is formed on both substrate of each word line of the cell region. A first insulating layer(34) is formed including on the substrate of the peripheral region including the word lines. A conductive material is formed on a front face of the substrate. A plug is formed on the cell region by flattening the conductive material. The remaining conductive material of the peripheral region is removed by mixed plasma of SF6+O2.