| 摘要 |
PROBLEM TO BE SOLVED: To provide a Cu thin film which is formed through a CVD method and has superior adhesion and a smooth planar shape. SOLUTION: A TiN thin film 14 or TaN thin film, having a thickness of 50 nm or less as an adhesion reinforcing layer, is formed on a substrate having a barrier metal film 13 formed thereon already by a CVD method using TDMAT, TDEAT, TiPMAT or a combination thereof or using Ta(N(CH3)2)5, Ta=(N(t--C4H9))(N(C2H5)2)3 or a combination thereof. Subsequently, a Cu thin film 15 is formed on the substrate by the CVD method with use of Cu1(HFAC)VTMS and Cu11(HFAC)2 as raw materials.
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