PROCESSING CHAMBER FOR ATOMIC LAYER DEPOSITION PROCESSES

摘要

A processing station (1201) adaptable to standard cluster tools (1100) has a vertically-translatable pedestal (1215) having wafer-support surface (1307) including a heater plate (1303). At a lower position wafers (1219) may be transferred to and from the processing station (1201), and at an upper position the pedestal (1215) forms an annular pumping passage with a lower circular opening in a processing chamber (1204). A replaceable ring (1253) at the lower opening of the processing chamber (1204) allows process pumping speed to be tailored for different processes. The pedestal (1215) also has a surrounding shroud (1257) defining an annular pumping passage around the pedestal (1215). A two-zone heater plate (1303) is adapted to the top of the pedestal (1215), and connects to a feedthrough (1301) allowing heater plate (1303) to be quickly and simply replaced. The top of the processing chamber (1204) is removable allowing users to remove either the pedestal (1215) or heater (1303) assemblies. The system is adapted to atomic layer deposition processing.