| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to prevent damage of a gate of a cell transistor. CONSTITUTION: Field oxide layers(2) are formed in a substrate(1) to define active regions. Next, cell transistors including gates are formed on the active regions of the substrate(1), and another gates are formed on the field oxide layers(2). Then, a first insulating layer(4) is deposited and partly etched to expose the gates. Subsequently, a second insulating layer is deposited and dry-etched to form side walls(5) in the etched first insulating layer(4). Next, a nitride layer(6) is deposited and partly polished to expose the first insulating layer(4) and the side walls(5) above only the active regions. Then, the exposed first insulating layer(4) and the side walls(5) are removed and the nitride layer(6) is selectively etched but on the gates. Finally, a polysilicon plug(7) is deposited and polished to be separated by the nitride layer(6) on the respective gates. Due to the wide plug(7), a margin in following processes is improved.
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