发明名称 |
ELECTRODE PLATE OF PLASMA ETCHING APPARATUS |
摘要 |
PURPOSE: An electrode plate of a plasma etching apparatus is provided to form a uniform etching plane regardless of a thickness of an etching plate to be etched. CONSTITUTION: An electrode plate of a plasma etching apparatus comprises a plurality of vertical through fine holes. The electrode plate is disposed so as to be opposed to an etching plane and to be spaced apart from the etching plane. The electrode plate consists of a high purity silicon which has a casting structure formed by one-direction solidification perpendicular to the etching plane. Etching gas is spouted from the vertical through fine holes.
|
申请公布号 |
KR20000035233(A) |
申请公布日期 |
2000.06.26 |
申请号 |
KR19990048571 |
申请日期 |
1999.11.04 |
申请人 |
MITSUBISHI MATERIALS CORP. |
发明人 |
MISIMA AKIHUMI;HIJI TOSIHARU;NAKADA YOSHINOBU;MORI DAMOS |
分类号 |
H01L21/302;C23F4/00;H01J37/32;H01L21/306;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|