| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit has electrical properties with a small temperature dependence. SOLUTION: A configuration example of a semiconductor integrated circuit is provided with an integrated circuit substrate 12, a buried layer 13, an epitaxial layer 14, a first transistor 15 for differential amplifier, a second transistor 16 for differential amplifier, an insulation film 17, first-layer wiring 18, an insulation film 19, and a metal film 20. With this kind of configuration, the temperature of the transistor 15 and 16 that are covered with the metal film 20 uniformly rises, even when electronic parts for generating heat at high temperature exist on the same substrate and an extreme temperature distribution is generated in the integrated circuit substrate 12, on when the entire temperature of the integrated circuit substrate 12 rises, since the heat transfer coefficient of the metal film 20 is larger than that of silicon, silicon oxide film, or nitride film for surrounding the electronic parts.
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