Reduction of black silicon in semiconductor fabrication
摘要
Reduction of black silicon is achieved by providing a protective device layer in the bead region and sides of the wafer before the formation of a hard etch mask. <IMAGE> <IMAGE> <IMAGE> <IMAGE>
申请公布号
EP0942461(A3)
申请公布日期
2000.06.21
申请号
EP19990301757
申请日期
1999.03.09
申请人
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
WANG, TING-HAO;PERNG, DUNG-CHING;DOBZINSKY, DAVE M.;WISE, RICHARD S.
