发明名称 |
Process for depositing high deposition rate halogen-doped silicon oxide layer |
摘要 |
A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nitrogen (such as N2). A plasma is formed from the process gas by applying a RF power component. Deposition is carried out at a rate of at least about 1.5 mu m/min. The resulting FSG film is stable and has a low dielectric constant.
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申请公布号 |
US6077764(A) |
申请公布日期 |
2000.06.20 |
申请号 |
US19970837641 |
申请日期 |
1997.04.21 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SUGIARTO, DIAN;HUANG, JUDY;CHEUNG, DAVID |
分类号 |
C23C16/40;H01L21/316;(IPC1-7):H01L21/44;H01L21/476 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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