发明名称 METHOD AND SYSTEM FOR PLASMA PROCESSING
摘要 PROBLEM TO BE SOLVED: To obtain a plasma processing system in which the processing performance can be controlled with high accuracy by controlling the active species in plasma independently from generating conditions of plasma, i.e., the pressure, flow rate and composition of material gas, and the characteristics can be sustained stably for a long term. SOLUTION: Plasma is formed through interaction of an electromagnetic wave of 300-500 MHz and a magnetic field and an electromagnetic wave of 50 kHz-30 MHz is superposed on the electromagnetic wave of 300-500 MHz on a flat plane 5 for introducing electromagnetic wave. Interval between the flat plane 5 and a sample 6 to be processed is set equal to or less than one half of the diameter of the sample 6 and active species is controlled depending on the interval. Consequently, active species in the plasma can be controlled effectively and independently from the generating conditions of plasma and the processing performance can be stabilized for a long term.
申请公布号 JP2000164583(A) 申请公布日期 2000.06.16
申请号 JP19990311729 申请日期 1999.11.01
申请人 HITACHI LTD 发明人 YOKOGAWA KATANOBU;IZAWA MASARU;ITABASHI NAOSHI;NEGISHI NOBUYUKI;TAJI SHINICHI
分类号 H01L21/302;C23F4/00;H01L21/3065;H05H1/46 主分类号 H01L21/302
代理机构 代理人
主权项
地址