| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor wherein attaining finer element is made while assuring element's operation speed. SOLUTION: A light-shielding film is provided on the side counter of a gate electrode with a silicon layer, where a source and drain are formed in between. Here, a light-shielding film in an n-channel thin-film transistor 16a is biased with a positive voltage with respect to a source voltage applied to the n-channel thin-film transistor 16a, while the light-shielding film in a p-channel thin-film transistor 16b is biased with a negative voltage with respect to a source voltage applied to the p-channel thin-film transistor 16b. |
