| 摘要 |
<p>PROBLEM TO BE SOLVED: To allow an inversion short-channel effect and enhanced short-channel effect of an MOS transistor to be reflected on simulation. SOLUTION: At simulation, based on a manufacturing process for an MOS transistor, a virtual ion-implantation process is added to a process simulation, so that an inversion short-channel effect and enhanced short-channel effect with an actual MOS transistor is reflected on a simulation result.</p> |
