| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the voltage generating circuit which generates a negative voltage suitable for word line drive, when the semiconductor storage device holds data. SOLUTION: This voltage generating circuit is equipped with charge pump regulators 10 and 20 and a voltage-converting circuit 30. The charge pump regulator 10 inputs Ext.Vcc and a ground voltage and outputs a negative voltage Vbb1. The charge pump regulator 20 inputs Int.Vcc and the negative voltage Vbb1 and outputs a negative voltage Vbb2 (<Vbb1). The voltage-converting circuit 30 inputs the Int.Vcc and a negative voltage Vbb2 and outputs an output voltage Vnn. The charge pump regulators 10 and 20 and voltage-converting circuit 30 are so designed that the voltage difference between the input and output is less than a prescribed value determined by the transistor size.</p> |
