发明名称 |
METHOD OF MANUFACTURING THIN FILM TRANSISTOR |
摘要 |
PURPOSE: A method of manufacturing a thin film transistor is to reduce a number of masks by a thin photo sensitive film between a source electrode and a drain electrode. CONSTITUTION: A method of manufacturing a thin film transistor comprises steps of: forming a gate lead and a gate electrode connected to the gate lead on an insulated substrate; forming a gate insulated film for covering the gate wiring; forming a semiconductor pattern on the gate insulated film; forming a resistive contact layer pattern on the semiconductor pattern; forming a data wiring including source and drain electrodes, and a data line connected to the source electrode, the source and drain electrodes being separately formed on the contact layer in flush with each other; forming a protective film pattern having a first contact hole for covering the data wiring and exposing the drain electrode; and forming a pixel electrode connected to the drain electrode through the first contact hole.
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申请公布号 |
KR20000033047(A) |
申请公布日期 |
2000.06.15 |
申请号 |
KR19980049710 |
申请日期 |
1998.11.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, DONG GYU |
分类号 |
G02F1/136;G02F1/13;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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