发明名称 METHOD OF MANUFACTURING THIN FILM TRANSISTOR
摘要 PURPOSE: A method of manufacturing a thin film transistor is to reduce a number of masks by a thin photo sensitive film between a source electrode and a drain electrode. CONSTITUTION: A method of manufacturing a thin film transistor comprises steps of: forming a gate lead and a gate electrode connected to the gate lead on an insulated substrate; forming a gate insulated film for covering the gate wiring; forming a semiconductor pattern on the gate insulated film; forming a resistive contact layer pattern on the semiconductor pattern; forming a data wiring including source and drain electrodes, and a data line connected to the source electrode, the source and drain electrodes being separately formed on the contact layer in flush with each other; forming a protective film pattern having a first contact hole for covering the data wiring and exposing the drain electrode; and forming a pixel electrode connected to the drain electrode through the first contact hole.
申请公布号 KR20000033047(A) 申请公布日期 2000.06.15
申请号 KR19980049710 申请日期 1998.11.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DONG GYU
分类号 G02F1/136;G02F1/13;(IPC1-7):G02F1/136 主分类号 G02F1/136
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